2008. 9. 10 1/6 semiconductor technical data KML0D6NP20EA n and p-ch trench mosfet revision no : 3 general description it?s mainly suitable for load switching cell phones, battery powered systems and level-shifter. features ? n-channel : v dss =20v, i d =600ma (r ds(on) =0.70 ? @ v gs =4.5v). : v dss =20v, i d =500ma (r ds(on) =0.85 ? @ v gs =2.5v). : v dss =20v, i d =350ma (r ds(on) =1.25 ? @ v gs =1.8v). ? p-channel : v dss =-20v, i d =-400ma (r ds(on) =1.2 ? @ v gs =-4.5v). : v dss =-20v, i d =-300ma (r ds(on) =1.6 ? @ v gs =-2.5v). : v dss =-20v, i d =-150ma (r ds(on) =2.7 ? @ v gs =-1.8v). maximum rating (ta=25 ? ) note 1) *surface mounted on fr4 board, t ?a 5sec characteristic symbol n-ch p-ch unit drain-source voltage v dss 20 -20 v gate-source voltage v gss ?? 6 ?? 6 v drain current dc @t a =25 ? i d * 515 -390 ma dc @t a =85 ? 370 -280 pulsed i dp 650 -650 source-drain diode current i s 450 -450 drain power dissipation p d * 280 280 mw maximum junction temperature t j 150 ? storage temperature range t stg -55 ?- 150 ? thermal resistance, junction to ambient r thja * 446 ? /w 1 2 3 6 5 4 s 1 g 1 d 2 d 1 g 2 s 2 pin connection (top view) 1 2 3 6 5 4 dim millimeters a a1 b1 c tes6 1.6 0.05 1.0 0.05 1.6 0.05 1.2 0.05 0.50 0.2 0.05 0.5 0.05 0.12 0.05 b d h j b1 b d a a1 c c j h 1 2 3 6 4 p p p5 5 + _ + _ + _ + _ + _ + _ + _ 1. source 1 2. gate 1 3. drain 2 4. source 2 5. gate 2 6. drain 1 marking type name a1 lot no.
2008. 9. 10 2/6 KML0D6NP20EA revision no : 3 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v n-ch 20 - - v i d =-250 a, v gs =0v p-ch -20 - - drain cut-off current i dss v gs =0v, v ds =16v n-ch - 0.3 100 na v gs =0v, v ds =-16v p-ch - -0.3 -100 gate leakage current i gss v gs = ?? 4.5v, v ds =0v n-ch - ?? 0.5 ?? 1.0 a p-ch - ?? 1.0 ?? 2.0 gate threshold voltage v th v ds =v gs, i d =250 a n-ch 0.45 - 1.0 v v ds =v gs, i d =-250 a p-ch -0.45 - -1.0 drain-source on resistance r ds(on) * v gs =4.5v, i d =600ma n-ch - 0.41 0.70 ? v gs =-4.5v, i d =-350ma p-ch - 0.80 1.20 v gs =2.5v, i d =500ma n-ch - 0.53 0.85 v gs =-2.5v, i d =-300ma p-ch - 1.20 1.60 v gs =1.8v, i d =350ma n-ch - 0.70 1.25 v gs =-1.8v, i d =-150ma p-ch - 1.80 2.70 on state drain current i d(on) * v gs =4.5v, v ds =5v n-ch 700 - - ma v gs =-4.5v, v ds =-5v p-ch -700 - - forward transconductance g fs * v ds =10v, i d =400ma n-ch - 1.0 - s v ds =-10v, i d =-250ma p-ch - 0.4 - source-drain diode forward voltage v sd * i s =150ma, v gs =0v n-ch - 0.8 1.2 v i s =-150ma, v gs =0v p-ch - -0.8 -1.2 dynamic total gate charge q g * n-ch : v ds =10v, i d =250ma, v gs =4.5v p-ch : v ds =-10v, i d =-250ma, v gs =-4.5v n-ch - 750 - pc p-ch - 1500 - gate-source charge q gs * n-ch - 75 - p-ch - 150 - gate-drain charge q gd * n-ch - 225 - p-ch - 450 - turn-on delay time t d(on) * n-ch : v dd =10v, i d =200ma, v gs =4.5v, r g =10 ? p-ch : v dd =-10v, v gs =-4.5v, i d =-200ma, r g =10 ? n-ch - 5 - ns p-ch - 5 - turn-off delay time t d(off) * n-ch - 25 - p-ch - 35 - note 2) *pulse test : pulse width ?a 300 ? , duty cycle ?a 2%.
2008. 9. 10 3/6 KML0D6NP20EA revision no : 3 gate - source voltage v gs (v) fig 1. i d - v ds drain - source voltage v ds (v) 0.0 0.0 0.5 0.2 0.4 0.6 0.8 1.0 1.0 1.5 2.0 2.5 3.0 0.2 0.6 0.0 0.4 1.0 0.8 1.0 1.5 0.0 0.5 2.5 2.0 fig 3. i d - v gs fig 6. i dr - v sdf drain current i d (a) drain current i d (a) fig 4. r ds(on) - t j -50 -25 25 50 75 125 100 0 reverse drain current i dr (ma) 1 10 1000 100 0.4 1.4 0.8 1.0 1.2 0.2 0.6 0.0 source - drain forward voltage v sdf (v) gate threshold voltage v th (v) fig 5. v th - t j -50 -25 -0.2 -0.1 -0.3 0.3 -0.0 0.2 0.1 0.6 0.8 1.4 1.0 1.6 1.2 050100 25 125 75 normalized drain- source on resistance r ds(on) ( ? ) junction temperature tj ( ) c junction temperature tj ( ) c v gs =1.8v v gs =5,4,3v v gs =2.0v v gs =2.5v v gs =1.0v i d = 250 a v gs = 4.5v i d = 350ma 25 c -55 c t c =125 c drain - current i d (a) 0.8 2.4 0.0 1.6 4.0 3.2 0.4 0.6 00.2 1.0 0.8 fig 2. r ds(on) - i d n-channel v gs =2.5v v gs =4.5v v gs =1.8v 50 c 25 c t j =125 c drain- source on resistance r ds(on) ( ? )
2008. 9. 10 4/6 KML0D6NP20EA revision no : 3 drain - source voltage v ds (v) capacitance c (pf) fig 8. c - v ds 20 8 12 04 16 0 40 100 60 80 20 c oss c iss c rss total gate - charge q g (nc) 0 5 3 1 2 4 0.4 0.2 0.8 0.6 0.0 fig 7. v gs - q g gate - source voltage v gs (v) v ds = 10v i d = 250ma v gs = 0v f = 1mhz fig 9. transient thermal response curve 10 -4 10 -2 10 -1 10 0 10 -1 10 -2 10 0 10 1 10 2 10 3 10 -3 square wave pulse duration (sec) normalized effective transient thermal resistance 0.1 0.02 0.05 0.2 duty=0.5 single - duty cycle d = t 1 /t 2 - per unit base = r thja = 500 /w t 1 t 2 p dm c
2008. 9. 10 5/6 KML0D6NP20EA revision no : 3 gate - source voltage v gs (v) fig 1. i d - v ds drain - source voltage v ds (v) 0.0 0.0 0.5 0.2 0.4 0.6 0.8 1.0 1.0 1.5 2.0 2.5 3.0 0.2 0.6 0.0 0.4 1.0 0.8 1.0 1.5 0.0 0.5 3.0 2.5 2.0 fig 3. i d - v gs fig 6. i dr - v sdf drain current i d (a) drain current i d (a) fig 4. r ds(on) - t j -50 -25 25 50 75 125 100 0 reverse drain current i dr (ma) 1 10 1000 100 0.4 1.4 0.8 1.0 1.2 0.2 0.6 0.0 source - drain forward voltage v sdf (v) gate threshold voltage v th (v) fig 5. v th - t j -50 -25 -0.2 -0.1 -0.3 0.3 -0.0 0.2 0.1 0.6 0.8 1.4 1.0 1.6 1.2 050100 25 125 75 normalized drain- source on resistance r ds(on) ( ? ) drain- source on resistance r ds(on) ( ? ) junction temperature tj ( ) c junction temperature tj ( ) c v gs =2.5v v gs =5v v gs =3v v gs =4v v gs =1.8v v gs =2v i d = 250 a v gs = 4.5v i d = 350ma 25 c -55 c t c =125 c drain - current i d (a) 0.8 2.4 0.0 1.6 4.0 3.2 0.4 0.6 00.2 1.0 0.8 fig 2. r ds(on) - i d p-channel v gs =2.5v v gs =4.5v v gs =1.8v -55 c 25 c t j =125 c
2008. 9. 10 6/6 KML0D6NP20EA revision no : 3 drain - source voltage v ds (v) capacitance c (pf) fig 8. c - v ds 20 8 12 04 16 0 40 120 100 60 80 20 c oss c iss c rss total gate - charge q g (nc) 0 5 3 1 2 4 0.8 0.6 0.4 0.2 1.6 1.4 1.2 1.0 0.0 fig 7. v gs - q g gate - source voltage v gs (v) v ds = 10v i d = 250ma v gs = 0v f = 1mhz fig 9. transient thermal response curve 10 -4 10 -2 10 -1 10 0 10 -1 10 -2 10 0 10 1 10 2 10 3 10 -3 square wave pulse duration (sec) normalized effective transient thermal resistance 0.1 0.02 0.05 0.2 duty=0.5 single - duty cycle d = t 1 /t 2 - per unit base = r thja = 500 /w t 1 t 2 p dm c
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